Deposited film forming apparatus

Details Deposited film forming apparatus Deposited film forming apparatus

1995-03-03

1996-06-18

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118718, 118723MW, 118723E, 156345, 20429538, C23C 1600

Patent

active

055273963

ABSTRACT:
A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4400409 (1983-08-01), Izu et al.
patent: 4438723 (1984-03-01), Carnella et al.
patent: 4626449 (1986-12-01), Hirai et al.
patent: 4645684 (1987-02-01), Osada et al.
patent: 4663829 (1987-05-01), Hartman et al.
patent: 4801474 (1989-01-01), Saitoh et al.
patent: 4812328 (1989-03-01), Saitoh et al.
patent: 4822636 (1989-04-01), Saitoh et al.
patent: 4834023 (1989-05-01), Saitoh et al.
patent: 4844950 (1989-07-01), Saitoh et al.
patent: 4865883 (1989-09-01), Saitoh et al.
patent: 4873125 (1989-10-01), Matsuyama et al.
patent: 4891095 (1990-01-01), Ishida et al.
patent: 4897284 (1990-01-01), Arai et al.
patent: 4921722 (1990-05-01), Osada et al.
patent: 4930442 (1990-06-01), Iida et al.
patent: 4985109 (1991-01-01), Otsubo et al.
patent: 5002617 (1991-03-01), Kanai et al.
patent: 5002618 (1991-03-01), Kanai et al.
patent: 5006180 (1991-04-01), Kanai et al.
patent: 5007971 (1991-04-01), Kanai et al.
patent: 5016565 (1991-05-01), Saitoh et al.
patent: 5024706 (1991-06-01), Kanai et al.
patent: 5134965 (1992-08-01), Tokuda et al.
patent: 5173641 (1992-12-01), Imahashi et al.
patent: 5204273 (1993-04-01), Guha et al.
patent: 5256576 (1993-10-01), Guha et al.
patent: 5279681 (1994-01-01), Matsuda et al.
patent: 5292370 (1994-03-01), Tsai et al.
Japanese Journal of Applied Physics, vol. 26, No. 8, Aug. 1987, T. Watanabe et al., "Microwave-Excited Plasma CVD of a-Si:H Films Utilizing a Hydrogen Plasma Stream or by Direct Excitation of Silane".
Japanese Journal of Applied Physics, vol. 26, No. 4, Apr. 1987, T. Watanabe et al., "Chemical Vapor Deposition of a-SiGe:H Films Utilizing a Microwave-Excited Plasma".
Applied Physics Letters, vol. 47, No. 10, Nov. 15, 1985, A. Matsuda et al., "Preparation of Highly Photosensitive Hydrogenated Amorphous Si-Ge Alloys Using a Triode Plasma Reactor".

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