Deposited film formation method utilizing selective deposition b

Details Deposited film formation method utilizing selective deposition b Deposited film formation method utilizing selective deposition b

1990-09-24

1993-01-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437194, 437195, 437203, H01L 21285

Patent

active

051806878

ABSTRACT:
By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.

REFERENCES:
patent: 4497683 (1985-02-01), Celler et al.
patent: 4786615 (1988-11-01), Liaw et al.
patent: 4804560 (1989-02-01), Shioya et al.
patent: 4824802 (1989-04-01), Brown et al.
patent: 4898841 (1990-02-01), Ho
patent: 4902645 (1990-02-01), Ohba
patent: 4920403 (1990-04-01), Chow et al.
patent: 4960732 (1990-10-01), Dixit et al.
patent: 4963511 (1990-10-01), Smith
patent: 5006484 (1991-04-01), Harada
R. A. Levy et al., "Characterization of LPCVD Aluminum for VLSI Processing", Journal of the Electrochemical Society, vol. 131, No. 9, pp. 2175-2182, Sep. 1984.
R. Bhat et al., "The Growth and Characterization of AlGaAs Using Dimethyl Aluminum Hydride", Journal of Crystal Growth, vol. 77, pp. 7-10 (1986).
M. Hanabusa et al., "Photochemical Vapor Deposition of Aluminum Thin Films Using Dimethylaluminum Hydride", Japanese Journal of Applied Physics, vol. 27, No. 8, pp. L1392-L1394, Aug. 1988.
A. Sekiguchi et al., "Gas-Temperature-Controlled (GTC) CVD of Aluminum and Aluminum-Silicon Alloy Film for VLSI Processing", Japanese Journal of Applied Physics, vol. 27, No. 11, pp. L2134-L2136, Nov. 1988.
Pierson, Thin Solid Films, vol. 45, pp. 257-263 (1977).
Hanabusha, et al., Japanese Journal of Applied Physics, vol. 27, No. 8, pp. 1392-1394 (Aug., 1988).

Affiliated with

Also associated with

Rating

Deposited film formation method utilizing selective deposition b does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deposited film formation method utilizing selective deposition b, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposited film formation method utilizing selective deposition b will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-101967