Deposit film forming apparatus with microwave CVD method

Details Deposit film forming apparatus with microwave CVD method Deposit film forming apparatus with microwave CVD method

1994-11-18

1995-07-18

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723ME, 118723MP, 118723R, C23C 1630

Patent

active

054337909

ABSTRACT:
A deposit film forming apparatus is disclosed. Cylindrical substrates are disposed within a reaction vessel to be substantially sealed so as to surround a discharge space, and microwave introducing means is provided to form a microwave discharge plasma containing a reactant arising from a source gas and contributing to the formation of film, apply the voltage to an electrode provided on said discharge space, and form a deposit film on a surface of said substrate, characterized in that said microwave introducing means except for at least a microwave introducing dielectric window is constituted of two areas made of mutually different materials, a first area for transmitting the microwave is composed of a metal, and a second area in contact with the plasma is composed of a dielectric of which the product of a dielectric constant (.epsilon.) and a dielectric loss tangent (tan .delta.) at a frequency of used microwave is equal to or less than 2.times.10.sup.-2.

REFERENCES:
patent: 4897284 (1990-01-01), Arai et al.
patent: 4930442 (1990-06-01), Iida et al.
patent: 4952273 (1990-08-01), Popov
patent: 4960073 (1990-10-01), Suzuki et al.
patent: 4998979 (1991-03-01), Niino
patent: 5016565 (1991-05-01), Saitoh et al.
patent: 5129359 (1992-07-01), Takei et al.

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