Depletion stop transistor

Details Depletion stop transistor Depletion stop transistor

1986-01-30

1988-06-07

James, Andrew J.

357 16, 357 30, 357 89, H01L 29205, H01L 2970

Patent

active

047500255

ABSTRACT:
We have found that transistors have desirable device characteristics when the base region is composed of a lightly doped layer near the emitter junction and a heavily doped layer near the collector junction. The edge of the depletion region at the emitter-base junction is designed to stop in the lightly doped base region.

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