1986-01-30
1988-06-07
James, Andrew J.
357 16, 357 30, 357 89, H01L 29205, H01L 2970
Patent
active
047500255
ABSTRACT:
We have found that transistors have desirable device characteristics when the base region is composed of a lightly doped layer near the emitter junction and a heavily doped layer near the collector junction. The edge of the depletion region at the emitter-base junction is designed to stop in the lightly doped base region.
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Chen Chung Y.
Cho Alfred Y.
American Telephone and Telegraph Company AT&T Bell Laboratories
Jackson Jerome
James Andrew J.
Laumann Richard D.
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