Depletion mode two-dimensional electron gas field effect transis

Details Depletion mode two-dimensional electron gas field effect transis Depletion mode two-dimensional electron gas field effect transis

1985-06-05

1987-08-25

Edlow, Martin H.

357 4, H01L 2980

Patent

active

046896465

ABSTRACT:
The depletion mode two-dimensional electron gas field effect transistor comprises a substantially pure semiconductor layer, an impurity doped super lattice semiconductor layer formed on the pure semiconductor layer, the energy band gaps and the electron affinities of the pure semiconductor layer and the super lattice semiconductor layer being selected to produce the two-dimensional electron gas at the surface of the pure semiconductor layer when no bias is applied to the super lattice semiconductor layer, source and drain regions formed separatedly in the super lattice semiconductor layer to reach the pure semiconductor layer, a gate electrode formed on the super lattice semiconductor layer between the source and drain regions, and large energy band gap regions formed at side portions of the gate electrode which do not face the source and drain regions, the large energy band gap regions having an energy band gap larger than the super lattice semiconductor layer and being formed by local annealing to convert the super lattice semiconductor to a mixed semiconductor.

REFERENCES:
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4424525 (1984-01-01), Mimura
patent: 4511408 (1985-04-01), Holonyak, Jr.

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