Depletion mode trench MOSFET for improved efficiency of...

Details Depletion mode trench MOSFET for improved efficiency of... Depletion mode trench MOSFET for improved efficiency of...

2011-04-19

2011-04-19

Weiss, Howard (Department: 2814)

Electric power conversion systems

Current conversion

Including d.c.-a.c.-d.c. converter

C257S341000, C257S365000, C257S368000, C257S371000, C257SE21473, C363S023000, C438S524000

Reexamination Certificate

active

07929321

ABSTRACT:
A DC-to-DC converter includes a high-side transistor and a low-side transistor wherein the high-side transistor is implemented with a high-side enhancement mode MOSFET. The low side-transistor further includes a low-side enhancement MOSFET shunted with a depletion mode transistor having a gate shorted to a source of the low-side enhancement mode MOSFET. A current transmitting in the DC-to-DC converter within a time-period between T2and T3passes through a channel region of the depletion mode MOSFET instead of a built-in diode D2of the low-side MOSFET transistor. The depletion mode MOSFET further includes trench gates surrounded by body regions with channel regions immediately adjacent to vertical sidewalls of the trench gates wherein the channel regions formed as depletion mode channel regions by dopant ions having electrical conductivity type opposite from a conductivity type of the body regions.

REFERENCES:
patent: 6096596 (2000-08-01), Gonzalez
patent: 2002/0134999 (2002-09-01), Hirokawa et al.
patent: 2006/0154423 (2006-07-01), Fried et al.
patent: 2007/0111428 (2007-05-01), Enicks et al.
patent: 2007/0195563 (2007-08-01), Shiraishi et al.
patent: 2007/0238429 (2007-10-01), Song et al.

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