Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2011-04-19
2011-04-19
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S185000, C257S186000, C257SE31033, C257SE31067, C438S093000, C438S094000
Reexamination Certificate
active
07928473
ABSTRACT:
The invention relates to a photo-detector with a reduced G-R noise, which comprises a sequence of a p-type contact layer, a middle barrier layer and an n-type photon absorbing layer, wherein the middle barrier layer has an energy bandgap significantly greater than that of the photon absorbing layer, and there is no layer with a narrower energy bandgap than that in the photon-absorbing layer.
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An Elbit Systems-Rafael Partnership
Fahmy Wael M
Frommer William S.
Frommer & Lawrence & Haug LLP
Ingham John C
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