Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1994-12-02
1996-01-16
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257197, 257526, 257586, 257618, 257623, H01L 2906, H01L 29161, H01L 29205, H01L 2302
Patent
active
054850258
ABSTRACT:
A collector-up bipolar transistor having an undercut region (522) beneath extrinsic regions of a base layer (510) and an emitter layer (508). The extrinsic emitter region is depleted of charge carriers and provides passivation for the extrinsic portion of the base layer (508). Contact to the emitter layer may be made by forming contacts on the top surface of the substrate (500) or in a recess in the backside of the substrate.
REFERENCES:
patent: 4967252 (1990-10-01), Awano
patent: 5159423 (1992-10-01), Clark et al.
patent: 5202752 (1993-04-01), Honjo
patent: 5298438 (1994-03-01), Hill
Song et al., "Self-Aligned InAlAs/InGaAs Heterojunction Bipolar Transistor with a Buried Subcollector Grown by Selective Epitaxy," IEEE Electron Device Letters, vol. 15, No. 4, Apr. 1994, pp. 123-125.
Luryi, "How to Make an Ideal HBT and Sell it Too," IEEE Transctions on Electron Devices, vol. 41, No. 12, Dec. 1994, pp. 2241-2247.
Chau Hin F.
Tserng Hua Q.
Crane Sara W.
Donaldson Richard L.
Kesterson James C.
Skrehot Michael K.
Tang Alice W.
LandOfFree
Depleted extrinsic emitter of collector-up heterojunction bipola does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Depleted extrinsic emitter of collector-up heterojunction bipola, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Depleted extrinsic emitter of collector-up heterojunction bipola will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-311419