Depleted channel photoconductor

Details Depleted channel photoconductor Depleted channel photoconductor

1986-08-18

1988-02-23

Goldberg, E. A.

Electrical resistors

Resistance value responsive to a condition

Photoconductive

H01L 3108

Patent

active

047273496

ABSTRACT:
Photoconductors with channels that lie in the surface depleted region of a GaAs structure are described. These devices have nanoampere bias current, and exhibit photoconductive gain. In contrast to other photoconductors, their low frequency responsivity is of the same order as that in the GHz region, alleviating problems of equalization necessary in receiver applications. As well, these devices exhibit over 60 dB isolation as optoelectronic switches.

REFERENCES:
patent: 4346394 (1982-08-01), Figueroa et al.
patent: 4427990 (1984-01-01), Nishizawa
patent: 4490709 (1984-12-01), Hammond et al.
patent: 4598305 (1986-07-01), Chiang et al.
R. I. MacDonald et al, "Depleted Layer Photoconductor", ECOC '85, pp. 553-556.
C. W. Slayman et al, "Frequency and Pulse Response of a Novel High Speed Interdigital Surface Photoconductor (IDPC)", IEEE 1981, pp. 112-114.
H. Beneking, "On the Response Behavior of Fast Photoconductive Optical Planar and Coaxial Semiconductor Detectors", 1982 IEEE, pp. 1431-1441.
J. C. Gammel, "An Epitaxial Photoconductive Detector for High Speed Optical Detection", 1979 IEEE, pp. 634-637.
C. Y. Chen et al, "Interdigitated Al.sub.0.48 In.sub.0.52 As/Ga.sub.0.47 In.sub.0.53 As Photoconductive Detectors", Appl. Phys. Lett. 44 (1), Jan. 1, 1984, pp. 99-101.
R. I. MacDonald et al, "Optoelectronic Switch Matrices: Recent Developments", Optical Engineering, vol. 24, pp. 220-224, 1985.

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