Denuding silicon substrates with oxygen and halogen

Details Denuding silicon substrates with oxygen and halogen Denuding silicon substrates with oxygen and halogen

1984-05-04

1987-05-19

Chaudhuri, Olik

Metal treatment

Compositions

Heat treating

148 334, 148DIG60, H01L 21324

Patent

active

046665323

ABSTRACT:
Semiconductor substrate materials, such as silicon, useful in the manufacture of electronic devices, such as integrated circuits, having a 0.05 to 2.0 micron thick layer of polysilicon on the backside to improve gettering capabilities of defects, contaminants and impurities away from the active device region of the substrate are provided with a 10 to 40 micron deep region from the surface having reduced oxygen concentration. The oxygen denuding is accomplished by heating the substrate material at a temperature of 1050.degree. to 1250.degree. C. first in the presence of oxygen to break up oxygen nuclei, secondly in the presence of oxygen and halogen to permit stacking fault retrogrowth and oxygen outdiffusion, and thirdly in the presence of oxygen, nitrogen and/or argon.

REFERENCES:
patent: 4053335 (1977-10-01), Hull
patent: 4548654 (1985-10-01), Tobin
patent: 4559086 (1985-12-01), Hawkins
patent: 4597804 (1986-07-01), Imaoka
patent: 4608095 (1986-08-01), Hill
patent: 4608096 (1986-08-01), Hill
R. A. Craven, Oxygen Precipitation in Czochralski Silicon, 1981, pp. 254-271, Semiconductor Silicon 1981, The Electrochemical Society, Inc.
K. Kugimiya et al., Denuded Zone and Microdefect Formation in Czochralsky-Grown Silicon Wafers by Thermal Annealing, 1981, pp. 294-303, Semiconductor Silicon 1981, The Electrochemical Society, Inc.
R. W. Series et al., Influence of Precipitate Size and Capillarity Effects on the Surface Denuded Zone in Thermally Processed CZ-Silicon Wafers, 1981, pp. 304-312, Semiconductor Silicon 1981, The Electrochemical Society, Inc.
R. A. Craven et al., Internal Gettering in Silicon, 1981, pp. 55-61, Solid State Technology, Jul. 1981.
D. Huber et al., Precipitation Process Design for Denuded Zone Formation in CZ Silicon Wafers, 1983, pp. 137-143, Solid State Technology, Aug. 1983.
W. K. Tice et al., Precipitation of Oxygen and Intrinsic Gettering in Silicon, 1981, pp. 367-380, Defects in Semiconductors, North-Holland Inc.
P. Gaworzewski et al., On The Out-Diffusion of Oxygen from Silicon 1981, pp. 511-516, Phys. Stat. Sol (a) 67, 511 (1981).
H. Shiraki, Silicon Device Consideration on Grown-in and Process Induced Defect and Fault Annihilation, 1977, pp. 546-558 Semiconductor Silicon 1977, The Electrochemical Society, Inc.
Nagasawa et al., "A New Intrinsic Gettering Technique . . . ", Appl. Phys. Lett., 37(7), 1 Oct. 1980, pp. 622-624.

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