Dense seed layer and method of formation

Details Dense seed layer and method of formation Dense seed layer and method of formation

2007-11-13

2007-11-13

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S412000, C257S762000, C257S763000, C257S764000, C257S765000

Reexamination Certificate

active

10980561

ABSTRACT:
Methods of forming dense seed layers and structures thereof. Seed layers comprising a monolayer of molecules having a density of about 0.5 or greater may be manufactured over a metal layer, resulting in a well defined interface region between the metal layer and a subsequently formed material layer. A seed layer comprising a monolayer of atoms is formed over the metal layer, the temperature of the workpiece is lowered, and a physisorbed layer is formed over the seed layer, the physisorbed layer comprising a weakly bound layer of first molecules. A portion of the first molecules in the physisorbed layer are dissociated by irradiating the physisorbed layer with energy, the dissociated atoms of the first molecules being proximate the seed layer. The workpiece is then heated, causing integration of the dissociated atoms of the first molecules of the physisorbed layer into the seed layer and removing the physisorbed layer.

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Schlichting, H., “Methoden und Mechanismen der thermischen Desoprtion: Adsorptions-, Desoroptions-Kinetik, Epitaxie und Ordnung von Edelgasschichten auf Ru(001),” Dissertation, Aug. 31, 1990, pp. i-iii and 88-94, Technische Universität München Fakultät fur Physik, München, Germany.

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