Dense nonvolatile electrically-alterable memory devices with fou

Details Dense nonvolatile electrically-alterable memory devices with fou Dense nonvolatile electrically-alterable memory devices with fou

1979-01-24

1982-02-02

Clawson, Jr., Joseph E.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 41, 357 54, 357 59, 365185, H01L 2978

Patent

active

043142656

ABSTRACT:
A compact, floating gate, nonvolatile, electrically-alterable memory device fabricated with four layers of polysilicon is described. A particular form of the device utilizes asperities to promote tunnel current flow through relatively thick oxides by means of relatively low average applied voltages. The use of four electrode layers leads to an extremely dense cell and memory array configuration.

REFERENCES:
patent: 3728695 (1973-04-01), Frohman-Bentchkowsky
patent: 3825946 (1974-07-01), Frohman-Bentchkowsky
patent: 3856587 (1974-12-01), Yamazaki et al.
patent: 3878549 (1975-04-01), Yamazaki et al.
patent: 3906296 (1975-09-01), Maserjian et al.
patent: 3925804 (1975-12-01), Cricchi et al.
patent: 4037242 (1977-07-01), Gosney
patent: 4050965 (1977-09-01), Ipri et al.
patent: 4099196 (1978-07-01), Simko
patent: 4112509 (1978-09-01), Wall
patent: 4115914 (1978-09-01), Harai
patent: 4122543 (1978-10-01), Bert et al.
patent: 4122544 (1978-10-01), McElroy
patent: 4146902 (1979-03-01), Tanimoto et al.

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