Dense nonvolatile electrically-alterable memory device with subs

Details Dense nonvolatile electrically-alterable memory device with subs Dense nonvolatile electrically-alterable memory device with subs

1981-02-02

1984-12-04

Munson, Gene M.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 23, 357 59, 365185, H01L 2702, H01L 2978, H01L 2904, G11C 1140

Patent

active

044867697

ABSTRACT:
A compact, floating gate, nonvolatile, electrically-alterable memory device fabricated with three layers of polysilicon and a substrate coupling electrode is described. A particular form of the device utilizes asperities to promote tunnel current flow through relatively thick oxides by means of relatively low average applied voltages. The use of four electrode layers leads to an extremely dense cell and memory array configuration. The substrate electrode is used to establish bias voltages in the cell.

REFERENCES:
patent: 4099196 (1978-07-01), Simko
patent: 4119995 (1978-10-01), Simko
patent: 4274012 (1981-06-01), Simko
patent: 4300212 (1981-11-01), Simko
patent: 4314265 (1982-02-01), Simko
W. S. Johnson et al., "A 16 Kb Electrically Erasable Nonvolatile Memory," Digest 1980, International Solid State Circuits Conference, pp. 152-153.
D. J. DiMaria et al., "Electrically-Alterable Memory Using a Dual Electron Injector Structure," IEEE Electron Device Letters, vol. EDL-1, No. 9, Sep. 1980.

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