Stock material or miscellaneous articles – All metal or with adjacent metals – Having variation in thickness
Patent
1979-10-12
1981-09-15
Lewis, Michael L.
Stock material or miscellaneous articles
All metal or with adjacent metals
Having variation in thickness
357 68, 357 71, 428620, 428641, 428651, 428666, 428674, B32B 330
Patent
active
042898340
ABSTRACT:
A double level metal interconnection structure and process for making same are disclosed, wherein an etch-stop layer is formed on the first metal layer to prevent over-etching thereof when forming the second level metal line in a via hole in an insulating layer thereover, by means of reactive plasma etching. The etch-stop layer is composed of chromium and the reactive plasma etching is carried out with a halocarbon gas.
REFERENCES:
patent: 3266127 (1966-08-01), Harding et al.
patent: 3325702 (1967-06-01), Cunningham
patent: 3387952 (1968-06-01), Chapelle
patent: 3804738 (1974-04-01), Lechaton et al.
patent: 3868723 (1975-02-01), Lechaton et al.
patent: 3881971 (1975-05-01), Greer et al.
patent: 3900944 (1975-08-01), Fuller et al.
patent: 3936865 (1976-02-01), Robinson
patent: 3969197 (1976-07-01), Tolar et al.
patent: 3994793 (1976-11-01), Harvilchuck et al.
patent: 4076575 (1978-02-01), Chang
patent: 4196443 (1980-04-01), Dingwall
patent: 4200969 (1980-05-01), Aoyama et al.
patent: 4242698 (1980-12-01), Ghote et al.
Alcorn George E.
Hamaker Raymond W.
Stephens Geoffrey B.
Hoel John E.
IBM Corporation
Lewis Michael L.
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