Dense content addressable memory cell

Details Dense content addressable memory cell Dense content addressable memory cell

2005-06-21

2005-06-21

Phan, Trong (Department: 2818)

Static information storage and retrieval

Associative memories

Ferroelectric cell

C365S154000, C365S156000, C365S203000

Reexamination Certificate

active

06909623

ABSTRACT:
A content addressable memory cell (10) comprises a word line12, a first bit line (14), and a second bit line (16). A pair of transistors (30-31) is arranged to store bits of data at first and second points (35and36). A first transistor (26) is coupled to the word line, the first bit line and the first point. A second transistor (27) is coupled to the word line, the second bit line and the second point. The word line voltage is changed in accordance with process parameters to allow conduction by the first and second transistors to compensate for leakage by the pair of transistors. For example, the first and second transistors may be operated in a triode mode.

REFERENCES:
patent: 3609710 (1971-09-01), Browne
patent: 5475633 (1995-12-01), Mehalel
Miyatake, H. et al., “A Design For High-Speed Low-Power CMOS Fully Parallel Content-Addressable Memory Macros”,IEEE Journal of Solid-State Circuits,IEEE Inc., vol. 36, No. 6, Jun. 2001, pp. 956-968.
Noda, K. et al., “A 1.9-μm2Loadless CMOS Four-Transistor SRAM Cell in a 0.18-μm Logic Technology”, Electron Devices Meeting, 1998.IEDM '98 Technical Digest.,International San Francisco, CA, 1998, pp. 643-646.
Grosspietsch, K.E., “Associative Processors and Memories: A Survey”,IEEE Micro,vol. 12, No. 3, Jun. 1, 1992, pp. 12-19.
“High Performance Static Content Addressable Memory Cell”,IBM Technical Disclosure Bulletin,IBM Corp., vol. 32, No. 3A, Aug. 1, 1989 p. 478.
Fitchen, Franklin C., “Transistor Circuit Analysis And Design”,D. Van Nostrand Co.(1960), pp. 304-314.

Affiliated with

Also associated with

Rating

Dense content addressable memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dense content addressable memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dense content addressable memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3477038