Dense chevron non-planar field effect transistors and method

Details Dense chevron non-planar field effect transistors and method Dense chevron non-planar field effect transistors and method

2007-11-14

2010-12-07

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

C257SE27108

Reexamination Certificate

active

07847320

ABSTRACT:
Disclosed are embodiments of semiconductor structure and a method of forming the semiconductor structure that simultaneously maximizes device density and avoids contacted-gate pitch and fin pitch mismatch, when multiple parallel angled fins are formed within a limited area on a substrate and then traversed by multiple parallel gates (e.g., in the case of stacked, chevron-configured, CMOS devices). This is accomplished by using, not a minimum lithographic fin pitch, but rather by using a fin pitch that is calculated as a function of a pre-selected contacted-gate pitch, a pre-selected fin angle and a pre-selected periodic pattern for positioning the fins relative to the gates within the limited area. Thus, the disclosed structure and method allow for the conversion of a semiconductor product design layout with multiple, stacked, planar FETs in a given area into a semiconductor product design layout with multiple, stacked, chevron-configured, non-planar FETs in the same area.

REFERENCES:
patent: 6716690 (2004-04-01), Wang et al.
patent: 6794718 (2004-09-01), Nowak et al.
patent: 6867460 (2005-03-01), Anderson et al.
patent: 7102181 (2006-09-01), Nowak et al.
patent: 2005/0173759 (2005-08-01), Kim et al.
patent: 2006/0154426 (2006-07-01), Anderson et al.
patent: 2006/0214233 (2006-09-01), Ananthanarayanan et al.
patent: 2007/0063276 (2007-03-01), Beintner et al.
patent: 2007/0082437 (2007-04-01), Cheng et al.

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