Dendrite growth control circuit

Details Dendrite growth control circuit Dendrite growth control circuit

2006-09-19

2006-09-19

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S753000, C438S222000

Reexamination Certificate

active

07109584

ABSTRACT:
A circuit is provided which prevents dendrite formation on interconnects during semiconductor device processing due to a dendrite-forming current. The circuit includes a switch located in at least one of the dendrite-forming current paths. The switch is configured to be open or in the “off” state during processing, and is configured to be closed or in the “on” state after processing to allow proper functioning of the semiconductor device. The switch may include an nFET or pFET, depending on the environment in which it is used to control or prevent dendrite formation. The switch may be configured to change to the “closed” state when an input signal is provided during operation of the fabricated semiconductor device.

REFERENCES:
patent: 4874711 (1989-10-01), Hughes et al.
patent: 6074949 (2000-06-01), Schounauer et al.
patent: 6162727 (2000-12-01), Schounauer et al.
patent: 6177349 (2001-01-01), Schounauer et al.
patent: 6197690 (2001-03-01), Schounauer et al.
patent: 6207569 (2001-03-01), Schounauer et al.
patent: 6319833 (2001-11-01), Schounauer et al.
patent: 6596637 (2003-07-01), Schounauer et al.

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