1980-03-07
1981-11-17
Edlow, Martin H.
357 16, 357 61, H01L 2714
Patent
active
043014631
ABSTRACT:
A three terminal, totally integrated demultiplexing photodiode is disclosed wherein information present simultaneously at two wavelengths can be developed into two separate currents available at the three terminals. Two quaternary layers (203 and 205) of indium, gallium, arsenide phosphide having unequal bandgaps and each having a pn junction are separated by a buffer layer (204) of n type indium phosphide. Operation at longer wavelengths is achieved by causing the bottom quaternary layer to have the higher bandgap energy thereby permitting it to detect the shorter wavelengths in the radiation and causing the topmost quaternary layer (205) to have the lower bandgap energy thereby permitting it to detect the longer wavelengths. The bottom contact (213) on the substrate has an opening thereby providing a window (230) through which incoming radiation (250) can be coupled through the substrate to the two quaternary layers.
REFERENCES:
patent: 3537029 (1970-10-01), Kressel
patent: 3821777 (1974-06-01), James
patent: 4213138 (1980-07-01), Campbell
patent: 4285375 (1981-03-01), Hsieh
Sakai, Appl. Phys. Lett., vol. 35, No. 8, Oct. 15, 1979, pp. 588-589.
Campbell, Appl. Phys. Lett., vol. 34, No. 6, Mar. 15, 1979, pp. 401-402.
Illegem, Appl. Phys. Lett., vol. 33, No. 7, Oct. 1, 1978, pp. 629-631.
Burrus, Jr. Charles A.
Campbell Joe C.
Dentai Andrew G.
Lee Tien P.
Bell Telephone Laboratories Incorporated
Dubosky Daniel D.
Edlow Martin H.
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