Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2008-08-12
2010-06-22
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S459000, C257SE21125
Reexamination Certificate
active
07741146
ABSTRACT:
A method of forming a multifunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a graded interlayer over the second subcell, the graded interlayer having a third band gap greater than the second band gap; forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; attaching a surrogate second substrate over the third solar subcell and removing the first substrate; and etching a first trough around the periphery of the solar cell to the surrogate second substrate so as to form a mesa structure on the surrogate second substrate and facilitate the removal of said solar cell from the surrogate second substrate.
REFERENCES:
patent: 4001864 (1977-01-01), Gibbons et al.
patent: 4255211 (1981-03-01), Fraas
patent: 4338480 (1982-07-01), Antypas et al.
patent: 4612408 (1986-09-01), Moddel et al.
patent: 5019177 (1991-05-01), Wanlass et al.
patent: 5053083 (1991-10-01), Sinton et al.
patent: 5217539 (1993-06-01), Fraas et al.
patent: 5322572 (1994-06-01), Wanlass et al.
patent: 5342453 (1994-08-01), Olson
patent: 5376185 (1994-12-01), Wanlass
patent: 5479032 (1995-12-01), Forrest et al.
patent: 5944913 (1999-08-01), Hou et al.
patent: 6180432 (2001-01-01), Freeouf
patent: 6194245 (2001-02-01), Tayanaka
patent: 6239354 (2001-05-01), Wanlass et al.
patent: 6252287 (2001-06-01), Kurtz et al.
patent: 6281426 (2001-08-01), Olson et al.
patent: 6300557 (2001-10-01), Wanlass et al.
patent: 6300558 (2001-10-01), Takamoto et al.
patent: 6340788 (2002-01-01), King et al.
patent: 6482672 (2002-11-01), Hoffman et al.
patent: 6660928 (2003-12-01), Patton et al.
patent: 6951819 (2005-10-01), Iles et al.
patent: 7071407 (2006-07-01), Faterni et al.
patent: 2002/0117675 (2002-08-01), Mascarenhas
patent: 2004/0200523 (2004-10-01), King et al.
patent: 2006/0021565 (2006-02-01), Zahler et al.
patent: 2006/0144435 (2006-07-01), Wanlass et al.
patent: 2006/0162768 (2006-07-01), Wanlass et al.
patent: 2007/0218649 (2007-09-01), Hernandez
patent: 2007/0277873 (2007-12-01), Cornfeld et al.
patent: 2008/0185038 (2008-08-01), Sharps
patent: 2008/0245409 (2008-10-01), Varghese et al.
patent: 2 878 076 (2006-05-01), None
patent: WO 2005/015638 (2005-02-01), None
R. Venkatasubramanian, et al., “An Inverted-Growth Approach to Development of an IR-Transparent, High-Efficiency AlGaAs/GaAs Cascade Solar Cell.” 22ndIEEE Photovoltaic Specialists Conference, Oct. 7-11, 1991, Las Vegas, NV, USA.
M. Yamaguchi, “Physics and Technologies of Superhigh-Effficiency Tandem Solar Cells.” Semiconductors, vol. 33, No. 9, Sep. 1999, pp. 961-964. Toyota Technological Institute, Nagoya, Japan. ©1999, American Institute of Physics.
R.R. King, et al., “Next-Generation, High-Efficiency III-V Multijunction Solar Cells.” 28thIEEE Photovoltaic Specialists Conference, Sep. 15-22, 2000, Anchorage, AK, USA.
S. Sinharoy, et al., “Progress in the Development of Metamorphic Multi-junction III-V Space Solar Cells.” Progress in Photovoltaics: Research and Applications, vol. 10, Feb. 2002, pp. 427-432. John Wiley & Sons, Ltd. Hoboken, NJ, USA.
R.R. King, et al., “High-Efficiency Space and Terrestrial Multijunction Solar Cells Through Bandgap Control in Cell Structures.” 2002 Photovoltaic Specialists Conference, Conference Record of the 29thIEEE, May 19-24, 2002, pp. 776-781. New Orleans, LA, USA.
M.W. Wanlass et al., “Lattice-Mismatched Approaches for High-Performance, III-V Photovoltaic Energy Converters.” Proceedings of the 31stIEEE PVSC, Jan. 3-7, 2005, Lake Buena Vista, FL, USA.
Takamoto, T., et al., “InGaP/GaAs-based Multijunction Solar Cells.” Progress in Photovoltaics: Research and Applications, 2005; vol. 13, pp. 495-511. Wiley InterScience, John Wiley & Sons, Ltd., Hoboken, NJ.
M.W. Wanlass et al., “Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells.” 2006 IEEE 4thWorld Conference on Photovoltaic Energy Conversion, May 7-12, 2006, Waikoloa, Hawaii, USA.
D.J. Friedman, et al., “0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Cell.” 2006 IEEE 4thWorld Conference on Photovoltaic Energy Conversion, May 7-12,1006, Waikoloa, hawaii, USA.
J.F. Geisz, et al., “High-efficiency GaInP/GaAs/InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction.” Applied Physics Letters 91, 023502 (2007), pp. 023502-1-023502-3. Online publication Jul. 10, 2007. American Institute of Physics, Melville, NY, USA.
P. Sharps, et al., “Inverting the triple junction improves efficiency and flexibility.” Compound Semiconductor. Oct. 2007, pp. 25-28. IOP Publishing, Ltd., Bristol, England.
H. Yoon, et al., “Progress of Inverted Metamorphic III-V Solar Cell Development at Spectrolab.” 33rdIEEE Photovoltaic Specialists Conference, May 11-16, 2008, San Diego, CA, USA.
J.F. Geisz, et al., “Inverted GaInP / (In)GaAs / InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions.” 33rdIEEE Photovoltaic Specialists Conference, May 11-16, 2008, San Diego, CA, USA.
A. Cornfeld, et al., “Development of a Large Area Inverted Metamorphic Multi-junction (IMM) Highly Efficient AM0 Solar Cell.” 33rdIEEE Photovoltaic Specialists Conference, May 11-16, 2008, San Diego, CA, USA.
A. Cornfeld, et al., “Development of a Large Area Inverted Metamorphic Multi-junction Highly Efficient AM0 Solar Cell.” Conference paper presented at the 33rdIEEE Photovoltaic Specialists Conference (May 11-16, 2008) on May 12, 2008. San Diego, CA, USA. 17 pages.
M. Stan, et al., “Very High Efficiency Triple Junction Solar Cells by MOVPE.” 14thInternational Conference of Metalorganic Vapor Phase Epitaxy. Jun. 1-6, 2008, Metz, France.
A. Cornfeld, et al., “Advances in the Performance of Inverted Metamorphic Multi-junction Solar Cells.” 23rdEuropean Photovoltaic Energy Conference, Sep. 1-5, 2008, Valencia, Spain.
“Partial European Search Report,” Application No. EP 08 01 3466. Feb. 12, 2009. European Patent Office, Berlin, Germany.
Cornfeld Arthur
Diaz Jacqueline
Varghese Tansen
Chaudhari Chandra
Emcore Solar Power, Inc.
LandOfFree
Demounting of inverted metamorphic multijunction solar cells does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Demounting of inverted metamorphic multijunction solar cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Demounting of inverted metamorphic multijunction solar cells will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4190480