Etching a substrate: processes – Forming or treating material useful in a capacitor
Patent
1996-06-11
1998-02-10
Gorgos, Kathryn L.
Etching a substrate: processes
Forming or treating material useful in a capacitor
216100, 216102, 216103, 216104, 216108, 216109, 3613061, 29 2503, H01G 4228, B21F 4100
Patent
active
057165327
ABSTRACT:
A method of improving the breakdown strength of polymer multi-layer (PML) capacitors is provided. The method comprises removing metal, specifically, aluminum, from the cut edge. This is done by either etching back the metal electrode layers in either basic or acidic solution or by anodizing the metal to cover that portion of the metal at the edge with an oxide. Removing the metal from the cut edge increases the breakdown strength of the PML capacitors by a factor of two or more.
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Huntoon Trey W.
Keimel John G.
Rhorer Alvin S.
Yializis Angelo
Gorgos Kathryn L.
Sigma Labs Inc.
Wong Edna
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