Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1997-09-24
1999-11-30
Nguyen, Kiet T.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 37317
Patent
active
059947080
ABSTRACT:
Charged-particle beam lithography apparatus are disclosed that form a demagnified image of a sub-field of a reticle on a sensitized substrate. The charged-particle beam is shaped by a field stop and the field stop is demagnified onto the reticle. A blanking deflector is provided that deflects the charged-particle beam. If the charged-particle beam is sufficiently deflected by the blanking deflector, a blanking aperture blocks the charged-particle-beam while maintaining uniform irradiation of the field stop. After transmission by the reticle, projection lenses project the charged-particle beam onto a sensitized substrate. The charged-particle beam is converging at the field stop so that scattering of the beam and heating of the field stop are reduced.
REFERENCES:
patent: 5747819 (1998-05-01), Nakasuji et al.
"Variable Axis Lens for Electron Beams," Pfeiffer, et al., Appl. Phys. Lett. 39(9), Nov. 1981, pp. 775-776.
"Recent Advances wit the Variable Axis Immersion Lens," Sturans, et al., J. Vac. Sci. Technol. B 6 (6), Nov./Dec. 1988, pp. 1995-1998.
Nakasuji et al., "Electron Optical Column for High-Speed Electron Beam Delineator: VL-R2," J. Vac. Sci. Technol. 21:872-878 (1982).
Nguyen Kiet T.
Nikon Corporation
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