Delta-strained quantum-well semiconductor lasers and optical amp

Details Delta-strained quantum-well semiconductor lasers and optical amp Delta-strained quantum-well semiconductor lasers and optical amp

1995-05-31

1996-11-26

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

H01S 318

Patent

active

055793312

ABSTRACT:
A quantum-well semiconductor laser/amplifier mounted on a highly conductive semiconductor substrate. Inactive regions include a highly doped N-region and a highly doped P-region. The N-region is composed of semiconductor material mounted on the substrate. The active region includes a quantum-well heterostructure of intrinsic semiconductor material that mounts on the N-region. The quantum-well structure includes a series of quantum wells, each having barrier layers, quantum-well layers, and a delta-strained layer mounted near the center of the quantum wells. The delta-strained layers are very thin, being formed from a number of mono-layers of semiconductor material. There is a large lattice mismatch between each of the delta-strained layers and its adjacent quantum-well layers. The band edges of the quantum-well layers and the delta-strained layers are located at substantially the same level. The P-region is composed of a semiconductor material that mounts on the quantum-well structure. A conductive contact is joined to the P-region. When used as a semiconductor laser, the active region forms a resonant laser cavity.

REFERENCES:
patent: 5172384 (1992-12-01), Goronkin et al.
patent: 5274247 (1993-12-01), Dutta et al.
patent: 5381260 (1995-01-01), Dutta et al.
Ahn et al, "The Theory of Strained-Layer Quantum-Well Lasers with Bandgap normalization", vol. 30, No. 2, Feb. 1994, pp. 350-365.
Yang, L., "A New InGaAs/InGaAsP delta-Strained Multiple-Quantum-Well Laser Grown by Chemical Beam Epitaxy", IEEE Phot. Tech. Lett., vol. 3, No. 5, May 1991, pp. 430-432.

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