Delta doped silicon carbide metal-semiconductor field effect...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

Reexamination Certificate

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C257S629000, C257S631000, C257S635000, C257S472000

Reexamination Certificate

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06906350

ABSTRACT:
The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a delta doped silicon carbide MESFET having a source, a drain and a gate. The gate is situated between the source and the drain and extends into a doped channel layer of a first conductivity type. Regions of silicon carbide adjacent to the source and the drain extend between the source and the gate and the drain and the gate, respectively. The regions of silicon carbide have carrier concentrations that are greater than a carrier concentration of the doped channel layer and are spaced apart from the gate.

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