Delta-doped ohmic metal to semiconductor contacts

Details Delta-doped ohmic metal to semiconductor contacts Delta-doped ohmic metal to semiconductor contacts

1986-06-06

1988-09-20

James, Andrew J.

357 71, 357 4, 357 16, 357 63, H01L 2348

Patent

active

047729341

ABSTRACT:
A non-alloyed ohmic contact in gallium arsenide is described wherein a plurality of delta-doped monolayers are placed at a predetermined distance from each other and from the metal to semiconductor interface of the contact. The predetermined distance is chosen to keep the tunneling barrier extremely thin. In the embodiment shown, silicon is used as a dopant in the gallium arsenide material but other elements from groups II, IV and VI of the periodic table of elements may be used in other III-V semiconductor substrates.

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