Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Synchronizing
Patent
1998-04-24
2000-05-23
Zweizig, Jeffrey
Miscellaneous active electrical nonlinear devices, circuits, and
Signal converting, shaping, or generating
Synchronizing
327117, 327165, 327172, 327294, H03L 706
Patent
active
060669683
ABSTRACT:
A delay lock loop circuit for a semiconductor memory element generates a synchronized internal clock signal by receiving an external clock signal as an input. The delay lock loop circuit generates a clock signal having a very fast period in order to enhance speed of data being synchronized by a clock signal. The delay lock loop (DLL) circuit includes: a N frequency dividing means which respectively receives the external signal having the frequency f, and generates a signal having a frequency f/N; a N delay lock loop means which respectively receives the signal having the frequency f/N generated from the N frequency dividing means, and maintains it for a predetermined period; and a merging means which performs a logic operation on each output pulse signal generated from the N delay lock loop means, and generates the synchronised internal signal.
REFERENCES:
patent: 4754163 (1988-06-01), Aue et al.
patent: 5369311 (1994-11-01), Wang et al.
Hyundai Electronics Industries Co,. Ltd.
Zweizig Jeffrey
LandOfFree
Delay lock loop circuit for semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Delay lock loop circuit for semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Delay lock loop circuit for semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1839425