Degradation resistance of semiconductor electroluminescent devic

Details Degradation resistance of semiconductor electroluminescent devic Degradation resistance of semiconductor electroluminescent devic

1977-06-29

1978-12-26

Edlow, Martin H.

Metal treatment

Stock

Ferrous

357 16, 357 63, 357 64, 148171, H01L 3300

Patent

active

041319044

ABSTRACT:
The P type conductivity layer or layers of an electroluminescent device includes zinc as the primary conductivity modifier, and germanium as the secondary conductivity modifier. The combination of zinc and germanium provide an electroluminescent device having improved reliability. In the method of fabricating the P type conductivity layer, the zinc and germanium are simultaneously introduced into the layer during deposition of the layer.

REFERENCES:
patent: 3912923 (1975-10-01), Kasano
patent: 4011113 (1977-03-01), Thomspon
patent: 4023062 (1977-05-01), Kressel

Affiliated with

Also associated with

Rating

Degradation resistance of semiconductor electroluminescent devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Degradation resistance of semiconductor electroluminescent devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Degradation resistance of semiconductor electroluminescent devic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1131447