Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1993-08-18
1994-02-22
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118715, 118725, 156613, C23C 1600
Patent
active
052883272
ABSTRACT:
A reactor cell for use in organo-metallic chemical vapor deposition (OMCVD). Multiple precursor gases are combined in a supply tube (14). A deflector section (56) connected to the supply tube consists of three tubes (58, 60, 61) joined at right angles to each other and to the supply tube in order to maximize the turbulence in the gas flow and to thereby uniformly mix the gas. The last of the three tubes is perpendicularly joined to a tapered section (30) of rectangular cross-section that tapers outwardly toward a deposition chamber (22) of rectangular cross section containing a heated susceptor (18) holding the wafer (20) over which the uniformly mixed gas flows and cracks, thereby epitaxially depositing some of its constituents on the wafer.
REFERENCES:
patent: 3717439 (1973-02-01), Sakai
patent: 4649859 (1987-03-01), Wanlass
patent: 4897149 (1990-01-01), Suzuki
patent: 5000113 (1991-03-01), Wang
patent: 5045496 (1991-09-01), Hess
IBM Tech. Dis. Bul. vol. 14, No. 9(Feb. 1972).
E. J. Thrush et al., "MOCVD grown InP/InGaAs structures for optical receivers," Journal of Crystal Growth, 1988, vol. 93, pp. 870-876.
J. van de Ven et al., "Gas phase depletion and flow dynamics in horizontal MOCVD reactors," Journal of Crystal Growth, 1986, vol. 76, pp. 352-372.
Aixtron's "Low-Pressure MOVPE: Concepts for Improved Quality and Safety," III--Vs Review, 1991, vol. 4, pp. 1, 3, 32, and 33.
Bell Communications Research Inc.
Bueker Richard
Falk James W.
Suchyta Leonard Charles
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