Defining a low-density pattern in a photoresist with an electron

Details Defining a low-density pattern in a photoresist with an electron Defining a low-density pattern in a photoresist with an electron

1978-04-07

1979-07-31

Dixon, Harold A.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250492A, A61K 2702

Patent

active

041631552

ABSTRACT:
By modifying the raster scanning mode of operation of an electron beam exposure system, it is practicable to directly define low-density features (100-102) in a relatively insensitive positive photoresist (10) that exhibits high resolution and good processing characteristics. As a result, it is feasible to utilize such a system as an adjunct in what is otherwise a photolithographic fabrication process to define certain critical features of a microminiature device.

REFERENCES:
patent: 3914608 (1975-10-01), Malmberg

Affiliated with

Also associated with

Rating

Defining a low-density pattern in a photoresist with an electron does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Defining a low-density pattern in a photoresist with an electron, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Defining a low-density pattern in a photoresist with an electron will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-23932