Defect size projection

Details Defect size projection Defect size projection

2007-11-27

2007-11-27

Barlow, John (Department: 2863)

Data processing: measuring, calibrating, or testing

Measurement system

Dimensional determination

C356S237600, C356S343000, C356S446000, C356S370000, C356S342000

Reexamination Certificate

active

11321689

ABSTRACT:
A system and method of inspecting semiconductor wafers that is capable of determining a scattering power associated with a wafer surface defect whether or not the scattering power associated with the defect exceeds the dynamic range of the system. The scattering power of the detected defect is obtained by determining the height of a Gaussian shape representing data collected by the system. The height of the Gaussian shape may be determined by defining a cross-sectional area of the Gaussian shape at an intermediate height, determining a cross-sectional area value and combining the area value, intermediate height and a slope value m that is representative of a relationship between the area of a cross-section in a Gaussian pulse and the height of the pulse at the cross-section. The technique increases the dynamic range of the equipment with a uniform scan process that can determine all defect sizes in a single scan pass.

REFERENCES:
patent: 5712701 (1998-01-01), Clementi et al.
patent: 2003/0058455 (2003-03-01), Ebihara et al.

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