Defect repair method employing non-defective pattern overlay...

Details Defect repair method employing non-defective pattern overlay... Defect repair method employing non-defective pattern overlay...

2006-02-28

2006-02-28

Huff, Mark F. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S022000, C430S311000, C430S313000, C438S004000

Reexamination Certificate

active

07005219

ABSTRACT:
A method for repairing a defective photomask having contained therein a minimum of one defect within a defective pattern employs a non-defective photomask for purposes of photoexposing a photoresist layer formed upon the defective photomask such as to form a patterned photoresist layer which leaves exposed the minimum of one defect. The minimum of one defect may then be repaired with the patterned photoresist layer in place as a repair mask. The method also provides for use of a non-defective pattern region within a defective photomask in a like fashion for repairing a defective pattern region within the same photomask. The method may be extended to repairing defective microelectronic products.

REFERENCES:
patent: 3748975 (1973-07-01), Tarabocchia
patent: 6319637 (2001-11-01), Higashikawa et al.

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