Active solid-state devices (e.g. – transistors – solid-state diode – Miscellaneous
Reexamination Certificate
2006-10-24
2006-10-24
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Miscellaneous
C257SE21530, C257SE21596, C257SE23171, C349S192000, C430S199000, C430S945000, C438S004000, C438S641000, C432S093000
Reexamination Certificate
active
07126232
ABSTRACT:
A method is described for repairing failure points, regions or locations in an electronic device to have a perfect function when a semiconductor device including an LCD of other electronic device has defects. Described is a method of transferring a single or multi-layer thin film piece into a recess with the physical properties of the thin film piece unchanged.An electronic device is described incorporating a substrate; and a plurality of thin films laminated on the substrate and part of the thin films are formed on a predetermined circuit pattern, wherein a transfer film for repairing a defect is fitted into a recess where the low layers of the thin films are exposed by removing part of a single or multi-layer thin films covering a defective portion included on the thin films and its surrounding portion. Further, a method of repairing a defective portion included in the electronic device comprises the steps of: removing the thin films covering the defective portion and its surrounding portion to form a recess and exposing the lower layers of the thin films; and fitting a transfer film into the recess to attach the transfer film onto the exposed thin films.
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Imahara Kazumitsu
Wada Kakehiko
AU Optronics Corporation
Flynn Nathan J.
Scully , Scott, Murphy & Presser, P.C.
Wilson Scott R.
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