Defect reduction in the growth of group III nitrides

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

4272557, C23C 1634

Patent

active

056501986

ABSTRACT:
The present invention relates to an improved method to produce Group III nitride thin film having a lower defect density, which method comprises:

REFERENCES:
patent: 4863755 (1989-09-01), Hess et al.
patent: 5082798 (1992-01-01), Arimoto
patent: 5106453 (1992-04-01), Benko et al.
patent: 5141569 (1992-08-01), Ito et al.
patent: 5141893 (1992-08-01), Ito et al.
patent: 5154949 (1992-10-01), Shindo et al.
patent: 5178911 (1993-01-01), Gordon et al.
patent: 5179042 (1993-01-01), Mikoshiba et al.
patent: 5196372 (1993-03-01), Mikoshiba et al.
patent: 5268039 (1993-12-01), Vogeli et al.
patent: 5296088 (1994-03-01), Kodama et al.
patent: 5305341 (1994-04-01), Nishikawa et al.
patent: 5343055 (1994-08-01), Davis et al.
patent: 5379720 (1995-01-01), Kuramata
patent: 5402748 (1995-04-01), Takai et al.
I. Akasaki, et al. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga.sub.1 -.sub.x A1.sub.x N (0<.sub.x .ltoreq.0.4). Journal of Crystal Growth 98 (1989) 209-219, North Holland, Amsterdam. (Month unavailable).
Properties of Group III Nitrides, by James H. Edgar, ed., INSPEC, the Institution of Electrical Engineers, London, United Kingdom, 1994, (Month unavailable) (Table of Contents).
S. Nakamura, et al. Applied Physics Letters, vol. 58, #18, 6 May 1991.
K. Hirosowa, et al. in Journal of Applied Physics, vol. 32 #8A, pp. L1039-L1042 1 Aug. 1993.
Hiroshi Amano, Tsunemori Asahi and Isamu Akasaki, Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AIN Buffer Layer, Japanese Journal of Applied Physics, vol. 29, No. 2, Feb. 1990, pp. L205-L206.
Shuji Nakamura, Takashi Mukai, and Masayuki Senoh, Candela-class high-brightness InGaN/AIGaN double-heterostructure blue-light-emitting diodes, Appl. Phys. Lett 64 (13), 28 Mar. 1994, pp. 1687-1689.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Defect reduction in the growth of group III nitrides does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Defect reduction in the growth of group III nitrides, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Defect reduction in the growth of group III nitrides will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1558816

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.