Defect reduction in electrodeposited copper for...

Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Coating selected area

Reexamination Certificate

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C205S118000, C205S296000

Reexamination Certificate

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10091106

ABSTRACT:
A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate having submicron-sized features, and a concentrate for forming a corresponding electroplating bath. A substrate is immersed into an electroplating bath formed from the concentrate including ionic copper and an effective amount of a defect reducing agent, and electroplating the copper deposit from the bath onto the substrate to fill the submicron-sized reliefs. The occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth are reduced, and macro-scale planarity across the wafer is improved.

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Declaration of Richard Hurtubise dated Dec. 21, 2004 (3 pages).

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