Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-06-13
2010-10-19
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S012000, C257S189000, C257S190000, C257S192000, C257S347000, C257S349000, C257S616000, C257S751000, C257SE21561, C257SE29056, C257SE33027
Reexamination Certificate
active
07816664
ABSTRACT:
A high-quality, substantially relaxed SiGe-on-insulator substrate material which may be used as a template for strained Si is described. The substantially relaxed SiGe-on-insulator substrate includes a Si-containing substrate, an insulating region that is resistant to Ge diffusion present atop the Si-containing substrate, and a substantially relaxed SiGe layer present atop the insulating region. The insulating region includes an upper region that is comprised of a thermal oxide and the substantially relaxed SiGe layer has a thickness of about 2000 nm or less.
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Bedell Stephen W.
Chen Huajie
Domenicucci Anthony G.
Fogel Keith E.
Sadana Devendra K.
Huynh Andy
International Business Machines - Corporation
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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