Defect reduction by oxidation of silicon

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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C257S012000, C257S189000, C257S190000, C257S192000, C257S347000, C257S349000, C257S616000, C257S751000, C257SE21561, C257SE29056, C257SE33027

Reexamination Certificate

active

07816664

ABSTRACT:
A high-quality, substantially relaxed SiGe-on-insulator substrate material which may be used as a template for strained Si is described. The substantially relaxed SiGe-on-insulator substrate includes a Si-containing substrate, an insulating region that is resistant to Ge diffusion present atop the Si-containing substrate, and a substantially relaxed SiGe layer present atop the insulating region. The insulating region includes an upper region that is comprised of a thermal oxide and the substantially relaxed SiGe layer has a thickness of about 2000 nm or less.

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