Defect reduction by oxidation of silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region

Reexamination Certificate

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C117S004000, C117S089000, C438S311000, C438S341000, C438S478000, C438S479000, C438S933000

Reexamination Certificate

active

10610612

ABSTRACT:
A method of fabricating high-quality, substantially relaxed SiGe-on-insulator substrate materials which may be used as a template for strained Si is described. A silicon-on-insulator substrate with a very thin top Si layer is used as a template for compressively strained SiGe growth. Upon relaxation of the SiGe layer at a sufficient temperature, the nature of the dislocation motion is such that the strain-relieving defects move downward into the thin Si layer when the buried oxide behaves semi-viscously. The thin Si layer is consumed by oxidation of the buried oxide/thin Si interface. This can be accomplished by using internal oxidation at high temperatures. In this way the role of the original thin Si layer is to act as a sacrificial defect sink during relaxation of the SiGe alloy that can later be consumed using internal oxidation.

REFERENCES:
patent: 6841457 (2005-01-01), Bedell et al.
patent: 6846727 (2005-01-01), Fogel et al.
patent: 6989058 (2006-01-01), Bedell et al.
patent: 6992025 (2006-01-01), Maa et al.
patent: 7026249 (2006-04-01), Bedell et al.
patent: 2005/0130424 (2005-06-01), Bedell et al.

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