Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region
Reexamination Certificate
2007-01-30
2007-01-30
Gupta, Yogendra (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having moving solid-liquid-solid region
C117S004000, C117S089000, C438S311000, C438S341000, C438S478000, C438S479000, C438S933000
Reexamination Certificate
active
10610612
ABSTRACT:
A method of fabricating high-quality, substantially relaxed SiGe-on-insulator substrate materials which may be used as a template for strained Si is described. A silicon-on-insulator substrate with a very thin top Si layer is used as a template for compressively strained SiGe growth. Upon relaxation of the SiGe layer at a sufficient temperature, the nature of the dislocation motion is such that the strain-relieving defects move downward into the thin Si layer when the buried oxide behaves semi-viscously. The thin Si layer is consumed by oxidation of the buried oxide/thin Si interface. This can be accomplished by using internal oxidation at high temperatures. In this way the role of the original thin Si layer is to act as a sacrificial defect sink during relaxation of the SiGe alloy that can later be consumed using internal oxidation.
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Bedell Stephen W.
Chen Huajie
Domenicucci Anthony G.
Fogel Keith E.
Sadana Devendra K.
Gupta Yogendra
International Business Machines - Corporation
Rao G. Nagesh
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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