Defect inspection of extreme ultraviolet lithography masks...

Details Defect inspection of extreme ultraviolet lithography masks... Defect inspection of extreme ultraviolet lithography masks...

2007-02-20

2007-02-20

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S030000, C430S296000, C430S942000, C430S966000, C430S967000, C382S144000

Reexamination Certificate

active

10616863

ABSTRACT:
A dark-field imaging method for detecting defects in reflective lithography masks (e.g., extreme ultraviolet (EUV) masks) used, e.g., in processes for the fabrication of microelectronic devices. A mask blank is coated with a photoresist layer having a fluorescent dye incorporated therein. The photoresist layer is exposed to a source of radiation (e.g., EUV radiation or glancing soft X-rays). In areas of the mask blank having defects the combined direct and reflected radiation will be insufficient fully to expose the photoresist layer. After development, photoresist will remain on the mask blank surface in areas corresponding to defects. Illumination with the excitation wavelength of the fluorescent dye reveals the location of any remaining photoresist, which can be detected using an optical microscope, thereby to detect defects in the mask blank.

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S.J. Spector et al., American Vacuum Society, Technique for rapid at-wavelength inspection of extreme ultraviolet mask blanks, J. Vac. Sci. Technol., vol. 17, No. 6, pp. 3003-3008, Nov./Dec. 1999, New York, New York.

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