Defect inspection method and defect inspection equipment

Image analysis – Applications – Manufacturing or product inspection

Reexamination Certificate

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Details

C382S274000, C348S086000, C348S125000, C438S016000

Reexamination Certificate

active

07065238

ABSTRACT:
Transforming optical images of a portion including a normal conductor pattern having a surface roughness, a portion subjected to an inspection, and a reference portion to images of electric charges and picking up these as electric signals by an image pick-up device, rendering the optical image including the normal conductor pattern having the surface roughness to a pixel signal by the image pick-up device, controlling a light volume of the optical image so that the pixel signal is saturated or immediately before the saturation, picking up a pixel signal of the portion to be inspected under this light volume, obtaining a differential signal from a pixel signal picked up from the reference portion, and judging an existence of defect from the differential signal, so as to detect defects such as a hiatus of conductor, a short circuit, and a deposition of an extraneous matter on a wafer, on which the normal conductor pattern having the roughened surface, with a high accuracy in processes of forming films and etching in manufacturing a semiconductor device.

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Sakurai et al. “Capture Rate Enhancement Method of 0.1 micro-meter Level Defects by Pattern Matching Inspectors”. Oct. 1999. 1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings. pp. 131-134.
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Translation of JP 02-134510 to Saito (May 23, 1990), presented in the IDS filed on Feb. 15, 2005.

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