Defect inspection apparatus for silicon wafer

Details Defect inspection apparatus for silicon wafer Defect inspection apparatus for silicon wafer

1998-11-24

2000-12-05

Rosenberger, Richard A.

Optics: measuring and testing

Inspection of flaws or impurities

356446, G01N 2188

Patent

active

061574449

ABSTRACT:
In order to easily evaluate defects of the silicon wafer affecting the characteristic of a device, the present invention provides a defect inspection apparatus for detecting defects existing on a surface of a sample and/or inside the sample, which comprises a display apparatus for displaying a distribution of the defects on a graph having coordinate axes of distance from a central position of the sample and the depth where the defect exists based on the depth information and the positional information obtained by a detecting means.

REFERENCES:
patent: 5936726 (1999-08-01), Takeda et al.
A New Method for Measurement of Micro Defects near the Surface of Si Wafers -Optical Shallow Defect Analyzer (OSDA)-, Kazuo Takeda, et al., pp. 151-153--The Japan Society of Applied Physics.
Applied Physics vol. 65, No. 11(1996) pp. 1162 to 1163.

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