Defect inspecting method

Details Defect inspecting method Defect inspecting method

2011-05-24

2011-05-24

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

C257SE21530

Reexamination Certificate

active

07947515

ABSTRACT:
A defect inspecting method includes: forming, in a first air pressure state, a film, which covers one opening of two openings provided on an upper surface of a substrate, on a tubular contact hole formed on the substrate in manufacturing a semiconductor device and formed in a tubular shape by connecting two cylindrical contact holes on bottom surface sides thereof, both ends of the tubular shape being opened in the openings; exposing the substrate covered with the film in a second air pressure state; and observing whether the film is deformed to thereby inspect whether the part of the tubular shape is blocked.

REFERENCES:
patent: 2003/0186472 (2003-10-01), Watanabe
patent: 2007/0144775 (2007-06-01), Hasegawa
patent: 3-149844 (1991-06-01), None
patent: 8-43061 (1996-02-01), None
patent: 8-162602 (1996-06-01), None
patent: 2005-11948 (2005-01-01), None
patent: 2006-155750 (2006-06-01), None
patent: 2007-128738 (2007-05-01), None
patent: 2007-309910 (2007-11-01), None

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