Defect correction method for EUV mask

Details Defect correction method for EUV mask Defect correction method for EUV mask

2011-04-19

2011-04-19

Rosasco, Stephen (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07927770

ABSTRACT:
According to an aspect of the present invention, there is provided a method for correcting a defect in an EUV mask, the method including: preparing an EUV mask including an absorption layer and an anti-reflection layer forming a pattern; recognizing a defect region in the pattern; defining a first region and a second region on the defect region, the second region extending from a desired pattern edge by a given distance, the first region being defined on the rest; removing the first region of the anti-reflection layer and the absorption layer by irradiating a beam in a first atmosphere; removing the second region of the anti-reflection layer and the absorption layer by irradiating the beam in a second atmosphere; and oxidizing an exposed side surface of the desired pattern edge of the absorption layer.

REFERENCES:
patent: 6753538 (2004-06-01), Musil et al.
patent: 6991878 (2006-01-01), Kanamitsu et al.
patent: 2004-537758 (2004-12-01), None

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