Defect analyzer

Details Defect analyzer Defect analyzer

2011-07-26

2011-07-26

Tsai, Carol S (Department: 2857)

Data processing: measuring, calibrating, or testing

Measurement system

Performance or efficiency evaluation

C702S117000, C702S118000, C702S185000, C700S121000, C714S046000, C250S310000, C250S311000

Reexamination Certificate

active

07987072

ABSTRACT:
The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.

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