Deep wordline trench to shield cross coupling between...

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185180, C365S185190

Reexamination Certificate

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11086648

ABSTRACT:
A NAND flash memory structure with a wordline or control gate that provides shielding from Yupin effect errors and generally from potentials in adjacent strings undergoing programming operations with significant variations in potential.

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