Deep wordline trench to shield cross coupling between...

Details Deep wordline trench to shield cross coupling between... Deep wordline trench to shield cross coupling between...

2005-05-24

2005-05-24

Hoang, Huan (Department: 2818)

Static information storage and retrieval

Floating gate

Particular connection

C365S185180, C365S185190

Reexamination Certificate

active

06898121

ABSTRACT:
A NAND flash memory structure with a wordline or control gate that provides shielding from Yupin effect errors and generally from potentials in adjacent strings undergoing programming operations with significant variations in potential.

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