Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...
Patent
1993-03-05
1994-05-24
Bowers, Jr., Charles L.
Radiation imagery chemistry: process, composition, or product th
Diazo reproduction, process, composition, or product
Composition or product which contains radiation sensitive...
430190, 430191, 430192, 430193, 430270, 430271, 534557, G03F 7023, G03F 730
Patent
active
053147820
ABSTRACT:
A positive working deep UV sensitive photoresist which provides improved critical dimension stability during prolonged periods of post exposure delay before baking comprises an acid stable polymer which is insoluble in water but normally soluble in an aqueous alkaline medium, a photo acid generator exemplified by the tri-(2,1,4-diazonaphthoquinonesulfonate) ester of 3,5-dinitro-2,6-dimethylol para cresol, and a mixed carbonate ester of tertiary butyl alcohol and a polyhydric phenol which is an acid labile compound which inhibits the dissolution of the normally soluble polymer in said alkaline medium.
REFERENCES:
patent: 2772972 (1956-12-01), Herrick, Jr. et al.
patent: 3046121 (1962-07-01), Schmidt
patent: 3494767 (1970-02-01), Laridon et al.
patent: 3779778 (1973-12-01), Smith et al.
patent: 3915706 (1975-10-01), Limburg et al.
patent: 4273668 (1981-06-01), Crivello
patent: 4311782 (1982-01-01), Buhr et al.
patent: 4467025 (1984-08-01), Goto et al.
patent: 4477553 (1984-10-01), Yamamoto et al.
patent: 4491628 (1985-01-01), Ito et al.
patent: 4632900 (1986-12-01), Demmer et al.
patent: 4678737 (1987-07-01), Schneller et al.
patent: 4963463 (1990-10-01), Koshiba et al.
patent: 5037721 (1991-08-01), Doessel
patent: 5068163 (1991-11-01), Elsaesser et al.
patent: 5073474 (1991-12-01), Schwalm et al.
patent: 5151340 (1992-09-01), Tadros
patent: 5178986 (1993-01-01), Zampini et al.
Nalamasu et al.; Effect of Post-Exposure Delay in Positive Acting Chemically Amplified Resists: An Analytical Study; Regional Technical Conference of the Mid-Hudson Section of the Society of Plastics Engineers; Oct., 1991.
Przybilla et al.; t-BOC Blocked Hydroxyphenyl-Meth-acrylates: On the Way to Quarter Micron Deep-UV Lithography; Regional Technical Conference of the Mid-Hudson Section of the Society of Plastics Engineers; Oct. 1991.
Houlihan et al; Phase transfer catalysis in the tert-butyloxycarbonylation of alcohols, phenols, enols, and thiols with di-tert-butly dicarbonate; Can. J. Chem., 63 (1985).
Reichmanis et al., The Effect of Substituents on the Photosensitivity of 2-Nitro-benzyl Ester Deep U.V. Resists, J. Electrochem, Jun. 1983 (vol. 130, No. 6).
Reichmanis et al., A Study of the Photochemical Response of .omicron.-Nitrobenzyl Cholate Derivatives in P(MMA-MAA) Matrices, Journal of Polymer Science, Polymer Chemistry Edition, vol. 21, (1983).
Reichmanis et al., .omicron.-Nitrobenzyl Photochemistry: Solution vs. Solid-State Behavior, Journal of Polymer Science, Polymer Chemistry Edition, vol. 23 (1985).
Reichmanis et al., A novel approach to .omicron.-nitrobenzyl photochemistry for resists, J.Vac.Sci. Technol.,Nov./Dec. 1981.
Tarascon et al., Poly(t-BOC-styrene sulfone)-Based Chemically Amplified Resists for Deep-UV Lithography, AT&T Bell Laboratories.
Frechet et al., Polycarbonates Derived from .omicron.-Nitrobenzyl Glycidyl Ether: Synthesis and Radiation Sensitivity, Dept. of Chemistry, Univ. of Ottawa, Ontario IBM Research Laboratory, San Jose, California.
Koes Thomas A.
Lazarus Richard M.
Bowers Jr. Charles L.
Chu John S.
Didrick Robert M.
Morton International Inc.
White Gerald K.
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