Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1994-10-04
1996-01-30
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
G21K 504
Patent
active
054882290
ABSTRACT:
A high resolution, deep UV photolithography system includes a deep UV radiation source for generating a beam of narrow wavelength deep ultraviolet radiation along a path, mask receiving structure in the path, a first optical system in the path for homogenizing and shaping the deep UV energy in the path; and a second optical system in the path for directing radiation energy onto the surface of a substrate to be processed, the second optical system including large area mirror structure having a numerical aperture of at least 0.3 and a plurality of refractive elements disposed between the mask receiving structure and the substrate for compensating (reducing) image curvature introduced into the system by the large area mirror structure.
REFERENCES:
patent: 4747678 (1988-05-01), Shafer et al.
patent: 4953960 (1990-09-01), Williamson
patent: 5031976 (1991-07-01), Shafer
patent: 5031977 (1991-07-01), Gibson
patent: 5206515 (1993-04-01), Elliott et al.
patent: 5212593 (1993-05-01), Williamson et al.
patent: 5220454 (1993-06-01), Ichihara et al.
patent: 5241423 (1993-08-01), Chiu et al.
patent: 5251070 (1993-10-01), Hashimoto et al.
Bingham et al., "The Priciples of Aberration-Corrected Optical Systems", SPIE, vol. 654, (1985), pp. 88-93.
Elliott David J.
Shafer David
Berman Jack I.
Excimer Laser Systems, Inc.
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