Deep trench with enhanced sidewall surface area

Details Deep trench with enhanced sidewall surface area Deep trench with enhanced sidewall surface area

1997-01-21

1998-12-15

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438716, 438734, 438973, 20419234, H01L 21302

Patent

active

058496386

ABSTRACT:
The present invention includes a method and system to increase the deep trench sidewall surface area in a storage node on a DRAM chip. By tilting the trenches the capacitance is increased without taking up more space on the semiconductor chip.

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patent: 5350499 (1994-09-01), Shibaike et al.
Ozaki et al "0.228 um `Trench Cell Tech with Bottle-Shaped Capacitor for 1Gbit DRAMs" IEDM 95, pp. 661-664.
T. Ozaki et al., 0.228 .mu.m.sup.2 Trench Cell Technologies with Bottle-Shaped Capacitor for 1Gbit DRAMSs IEDM 95, pp. 661-664, 1995.

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