Deep trench isolation structure of a high-voltage device and...

Details Deep trench isolation structure of a high-voltage device and... Deep trench isolation structure of a high-voltage device and...

2007-07-10

2007-07-10

Lee, Calvin (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C438S433000

Reexamination Certificate

active

11246092

ABSTRACT:
A deep trench isolation structure of a high-voltage device and a method of forming thereof. An epitaxial layer with a second type conductivity is formed on a semiconductor silicon substrate with a first type conductivity. A deep trench passes through the epitaxial layer. An ion diffusion region with the first type conductivity is formed in the epitaxial layer and surrounds the sidewall and bottom of the deep trench. An undoped polysilicon layer fills the deep trench.

REFERENCES:
patent: 4653177 (1987-03-01), Lebowitz et al.
patent: 4833094 (1989-05-01), Kenney
patent: 4939567 (1990-07-01), Kenney
patent: 5066607 (1991-11-01), Banerjee
patent: 5442214 (1995-08-01), Yang
patent: 5684319 (1997-11-01), Hebert
patent: 5843828 (1998-12-01), Kinoshita
patent: 5892264 (1999-04-01), Davis et al.
patent: 6252277 (2001-06-01), Chan et al.
patent: 6476443 (2002-11-01), Kinzer
patent: 6518618 (2003-02-01), Fazio et al.
patent: 6576516 (2003-06-01), Blanchard
patent: 6838735 (2005-01-01), Kinzer et al.
patent: 2001/0026989 (2001-10-01), Thapar

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