Deep trench isolation structure of a high-voltage device and...

Details Deep trench isolation structure of a high-voltage device and... Deep trench isolation structure of a high-voltage device and...

2005-12-06

2005-12-06

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S510000, C257S511000, C257S302000, C257S330000

Reexamination Certificate

active

06972471

ABSTRACT:
A deep trench isolation structure of a high-voltage device and a method of forming thereof. An epitaxial layer with a second type conductivity is formed on a semiconductor silicon substrate with a first type conductivity. A deep trench passes through the epitaxial layer. An ion diffusion region with the first type conductivity is formed in the epitaxial layer and surrounds the sidewall and bottom of the deep trench. An undoped polysilicon layer fills the deep trench.

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