Deep trench filling method using silicon film deposition and sil

Details Deep trench filling method using silicon film deposition and sil Deep trench filling method using silicon film deposition and sil

1996-04-09

1999-03-30

Brown, Peter Toby

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438430, H01L 2120, H01L 2176

Patent

active

058888764

ABSTRACT:
A method of filling one or more trenches formed in a silicon substrate includes the steps of forming a thin polycrystalline silicon film in a trench such that the thin polycrystalline silicon film is sufficiently thin so as to not close the trench; forming an amorphous silicon film on thin polycrystalline film and the surface of the substrate and in the trenches; and annealing the amorphous silicon film such that the amorphous silicon layer migrates to fill the trenches to a first level. The deposition and annealing steps are performed in ambient atmospheres having low partial pressures of H.sub.2 O and O.sub.2, the annealing temperature is higher than the deposition temperature, and the annealing pressure is greater than the deposition pressure.

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