Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2006-10-17
2006-10-17
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S243000, C438S244000, C438S387000, C438S700000
Reexamination Certificate
active
07122437
ABSTRACT:
A deep trench capacitor used in a trench DRAM includes a buried plate and an isolation collar. The deep trench is bottle-shaped, and the isolation collar is formed in upper portion of the wider region of the bottle-shaped trench. The buried plate surrounds the lower portion of the wider part of the bottle-shaped trench, and hemispherical grain polysilicon lines the walls of at least the lower portion of the wider part of the trench. A nitride liner layer lines the inner walls of the oxide collar and prevents diffusion of dopant through the oxide collar into the substrate when the HSG polysilicon and the doped buried plate are formed. The buried plate region is self-aligned to the isolation collar. The depth of the top of the wider part of the bottle shape and the bottom depth of the isolation collar are determined by successive resist deposition and recessing steps.
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Divakaruni Ramachandra
Dyer Thomas W.
Radens Carl
Ramachandran Ravikumar
Sung Chun-yung
Fourson George R.
Garcia Joannie Adelle
Infineon - Technologies AG
International Business Machines - Corporation
Slater & Matsil L.L.P.
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